Demonstration of a 256×256 middle-wavelength infrared focal plane array based on InGaAs/InGaP quantum dot infrared photodetectors
Identifieur interne : 00A671 ( Main/Repository ); précédent : 00A670; suivant : 00A672Demonstration of a 256×256 middle-wavelength infrared focal plane array based on InGaAs/InGaP quantum dot infrared photodetectors
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Abstract
We report a demonstration of an infrared focal plane array based on InGaAs/InGaP quantum dot infrared photodetectors. The middle-wavelength infrared quantum-dot infrared photodetector (QDIP) structure was grown via low-pressure metal organic chemical vapor deposition. A detectivity of 3.6×1010 cmHz1/2/W was achieved at T=95 K and a bias of -1.4 V. The background limited temperature of our QDIP was 140 K with a 45° field of view. A 256×256 detector array was fabricated with dry etching, and hybridized to a Litton readout chip by indium bumps. Thermal imaging was achieved at temperatures up to 120 K. At T=77 K, the noise equivalent temperature difference was measured as 0.509 K with a 300 K background and f/2.3 optics. © 2004 American Institute of Physics.
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Jiang</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for Quantum Devices Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Illinois</region></placeName><wicri:cityArea>Center for Quantum Devices Department of Electrical and Computer Engineering, Northwestern University, Evanston</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Air Force Research Laboratory, Materials & Manufacturing Directorate, AFRL/MLPS, Wright-Patterson AFB, Ohio 45433-7707</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Ohio</region></placeName><wicri:cityArea>Air Force Research Laboratory, Materials & Manufacturing Directorate, AFRL/MLPS, Wright-Patterson AFB</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Missile Defense Agency, 7100 Defense Pentagon, Washington, DC 20301</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">District de Columbia</region></placeName><wicri:cityArea>Missile Defense Agency, 7100 Defense Pentagon, Washington</wicri:cityArea></affiliation></author><author><name sortKey="Mi, K" uniqKey="Mi K">K. Mi</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for Quantum Devices Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Illinois</region></placeName><wicri:cityArea>Center for Quantum Devices Department of Electrical and Computer Engineering, Northwestern University, Evanston</wicri:cityArea></affiliation></author><author><name sortKey="Tsao, S" uniqKey="Tsao S">S. Tsao</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for Quantum Devices Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Illinois</region></placeName><wicri:cityArea>Center for Quantum Devices Department of Electrical and Computer Engineering, Northwestern University, Evanston</wicri:cityArea></affiliation></author><author><name sortKey="Zhang, W" uniqKey="Zhang W">W. Zhang</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for Quantum Devices Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Illinois</region></placeName><wicri:cityArea>Center for Quantum Devices Department of Electrical and Computer Engineering, Northwestern University, Evanston</wicri:cityArea></affiliation></author><author><name sortKey="Lim, H" uniqKey="Lim H">H. Lim</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for Quantum Devices Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Illinois</region></placeName><wicri:cityArea>Center for Quantum Devices Department of Electrical and Computer Engineering, Northwestern University, Evanston</wicri:cityArea></affiliation></author><author><name sortKey="Osullivan, T" uniqKey="Osullivan T">T. Osullivan</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for Quantum Devices Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Illinois</region></placeName><wicri:cityArea>Center for Quantum Devices Department of Electrical and Computer Engineering, Northwestern University, Evanston</wicri:cityArea></affiliation></author><author><name sortKey="Sills, T" uniqKey="Sills T">T. Sills</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for Quantum Devices Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Illinois</region></placeName><wicri:cityArea>Center for Quantum Devices Department of Electrical and Computer Engineering, Northwestern University, Evanston</wicri:cityArea></affiliation></author><author><name sortKey="Razeghi, M" uniqKey="Razeghi M">M. Razeghi</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for Quantum Devices Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Illinois</region></placeName><wicri:cityArea>Center for Quantum Devices Department of Electrical and Computer Engineering, Northwestern University, Evanston</wicri:cityArea></affiliation></author><author><name sortKey="Brown, G J" uniqKey="Brown G">G. J. Brown</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for Quantum Devices Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Illinois</region></placeName><wicri:cityArea>Center for Quantum Devices Department of Electrical and Computer Engineering, Northwestern University, Evanston</wicri:cityArea></affiliation></author><author><name sortKey="Tidrow, M Z" uniqKey="Tidrow M">M. Z. Tidrow</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for Quantum Devices Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Illinois</region></placeName><wicri:cityArea>Center for Quantum Devices Department of Electrical and Computer Engineering, Northwestern University, Evanston</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">04-0144097</idno><date when="2004-03-29">2004-03-29</date><idno type="stanalyst">PASCAL 04-0144097 AIP</idno><idno type="RBID">Pascal:04-0144097</idno><idno type="wicri:Area/Main/Corpus">00BC47</idno><idno type="wicri:Area/Main/Repository">00A671</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Etching</term><term>Experimental study</term><term>Focal planes</term><term>Gallium arsenides</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Infrared detectors</term><term>MOCVD coatings</term><term>Photodetectors</term><term>Semiconductor quantum dots</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8560G</term><term>8107T</term><term>8105E</term><term>6865H</term><term>8165C</term><term>Etude expérimentale</term><term>Indium composé</term><term>Plan focal</term><term>Gallium composé</term><term>Gallium arséniure</term><term>Semiconducteur III-V</term><term>Point quantique semiconducteur</term><term>Détecteur IR</term><term>Photodétecteur</term><term>Revêtement MOCVD</term><term>Gravure</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report a demonstration of an infrared focal plane array based on InGaAs/InGaP quantum dot infrared photodetectors. The middle-wavelength infrared quantum-dot infrared photodetector (QDIP) structure was grown via low-pressure metal organic chemical vapor deposition. A detectivity of 3.6×10<sup>10</sup> cmHz<sup>1/2</sup>/W was achieved at T=95 K and a bias of -1.4 V. The background limited temperature of our QDIP was 140 K with a 45° field of view. A 256×256 detector array was fabricated with dry etching, and hybridized to a Litton readout chip by indium bumps. Thermal imaging was achieved at temperatures up to 120 K. At T=77 K, the noise equivalent temperature difference was measured as 0.509 K with a 300 K background and f/2.3 optics. © 2004 American Institute of Physics.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>84</s2></fA05><fA06><s2>13</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Demonstration of a 256×256 middle-wavelength infrared focal plane array based on InGaAs/InGaP quantum dot infrared photodetectors</s1></fA08><fA11 i1="01" i2="1"><s1>JIANG (J.)</s1></fA11><fA11 i1="02" i2="1"><s1>MI (K.)</s1></fA11><fA11 i1="03" i2="1"><s1>TSAO (S.)</s1></fA11><fA11 i1="04" i2="1"><s1>ZHANG (W.)</s1></fA11><fA11 i1="05" i2="1"><s1>LIM (H.)</s1></fA11><fA11 i1="06" i2="1"><s1>OSULLIVAN (T.)</s1></fA11><fA11 i1="07" i2="1"><s1>SILLS (T.)</s1></fA11><fA11 i1="08" i2="1"><s1>RAZEGHI (M.)</s1></fA11><fA11 i1="09" i2="1"><s1>BROWN (G. J.)</s1></fA11><fA11 i1="10" i2="1"><s1>TIDROW (M. Z.)</s1></fA11><fA14 i1="01"><s1>Center for Quantum Devices Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></fA14><fA14 i1="02"><s1>Air Force Research Laboratory, Materials & Manufacturing Directorate, AFRL/MLPS, Wright-Patterson AFB, Ohio 45433-7707</s1></fA14><fA14 i1="03"><s1>Missile Defense Agency, 7100 Defense Pentagon, Washington, DC 20301</s1></fA14><fA20><s1>2232-2234</s1></fA20><fA21><s1>2004-03-29</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2004 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>04-0144097</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We report a demonstration of an infrared focal plane array based on InGaAs/InGaP quantum dot infrared photodetectors. The middle-wavelength infrared quantum-dot infrared photodetector (QDIP) structure was grown via low-pressure metal organic chemical vapor deposition. A detectivity of 3.6×10<sup>10</sup> cmHz<sup>1/2</sup>/W was achieved at T=95 K and a bias of -1.4 V. The background limited temperature of our QDIP was 140 K with a 45° field of view. A 256×256 detector array was fabricated with dry etching, and hybridized to a Litton readout chip by indium bumps. Thermal imaging was achieved at temperatures up to 120 K. 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